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| DSSK 80-0025B DSSK 80-003B Power Schottky Rectifier with common cathode IFAV = 2x40 A VRRM = 25 / 30 V VF = 0.39 V VRSM V 25 30 VRRM V 25 30 Type A C A TO-247 AD DSSK 80-0025B DSSK 80-003B A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight Conditions TC = 130C; rectangular, d = 0.5 TC = 130C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = 6 A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive Maximum Ratings 70 40 80 600 10 6 5000 -55...+150 150 -55...+150 A A A A mJ A V/s C C C W Nm g Features * International standard package * Very low VF * Extremely low switching losses * Low IRM-values * Epoxy meets UL 94V-0 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters TC = 25C mounting torque typical 155 0.8...1.2 6 Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses Dimensions see pages D2 - 87-88 Symbol IR VF Conditions TVJ = 25C VR = VRRM TVJ = 100C VR = VRRM IF = 40 A; IF = 40 A; IF = 80 A; TVJ = 125C TVJ = 25C TVJ = 125C 0.25 Characteristic Values typ. max. 40 250 0.39 0.48 0.56 0.8 mA mA V V V K/W K/W RthJC RthCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified 232 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2002 IXYS All rights reserved 1-2 DSSK 80-0025B DSSK 80-003B 100 A IF IR 10000 mA 1000 125C 100C TVJ = 150C 10000 pF CT 100 10 10 TVJ = 150C 125C 25C 75C 1 50C TVJ= 25C 25C 1 0.0 0.1 0.2 0.4 VF V0.6 0 1000 10 15 20 V 25 VR 0 5 10 15 20 V 25 VR 5 Fig. 1 Maximum forward voltage drop characteristics 80 A 70 IF(AV) 60 50 40 30 20 10 0 0 40 80 120 TC 160 C d = 0.5 DC Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 40 W 35 P(AV) 30 25 20 15 10 5 0 0 10 20 30 40 50 IF(AV) 60 A d= DC 0.5 0.33 0.25 0.17 0.08 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR A IFSM s tP Fig. 4 Average forward current IF(AV) versus case temperature TC 1 Fig. 5 Forward power loss characteristics K/W ZthJC D=0.5 0.33 0.25 0.17 Single Pulse 0.08 0.1 DSSK 80-0025B 0.001 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode (c) 2002 IXYS All rights reserved 2-2 |
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